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  unisonic technologies co., ltd mmbt945 npn silicon transistor www.unisonic.com.tw 1of 4 copyright ? 2010 unisonic technologies co., ltd qw-r206-094.b audio frequency amplifier high frequency osc npn transistor ? description the utc mmbt945 is an audio frequency amplifier high frequency osc npn transistor. ? features * collector-emitter voltage: bv cbo =50v * collector current up to 150ma * high h fe linearity * complimentary to utc mmbt733 ? ordering information pin assignment ordering number package 1 2 3 packing MMBT945G-X-AE3-R sot-23 e b c tape reel mmbt945g-x-al3-r sot-323 e b c tape reel ? marking
mmbt945 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-094.b ? absolute maximum ratings (t a =25 , unless otherwise specified ) parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 50 ma collector dissipation(ta=25 c) p c 200 mw junction temperature t j 125 storage temperature t stg -55 ~ +125 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 60 v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 50 v collector cut-off current i cbo v cb =40v, i e =0 100 na emitter cut-off current i ebo v eb =3v, i c =0 100 na dc current gain h fe v ce =6v, i c =1ma 90 600 collector-emitter satu ration voltage v ce(sat) i c =100ma, i b =10ma 0.1 0.3 v current gain bandwidth product f t v ce =10v, i c =50ma 100 190 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 2.0 3.0 pf noise figure nf i c =-0.1ma, v ce =6v r g =10k ? , f=100hz 4.0 6.0 db ? classification of h fe rank r q p k range 90-180 135-270 200-400 300-600
mmbt945 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-094.b ? typical characteristics collector current, i c (ma) dc current gain, h fe collector current, i c (ma) saturation voltage (mv) current gain-bandwidth product c ollector output capacitance collector current, i c (ma) v ce =6v collector-base voltage (v) f=1mhz i e =0 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2
mmbt945 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-094.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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